Low-temperature deposition of α-Al2O3 films by laser chemical vapor deposition using a diode laser

Abstract: We prepared Al2O3 films by laser chemical vapor deposition (LCVD) using a diode laser and aluminum acetylacetonate (Al(acac)3) precursors and investigated the effects of laser power (P L), deposition temperature (T dep), and total pressure (P tot) in a reaction chamber on the crystal phase, microstructure, and deposition rate (R dep). An amorphous phase was obtained at P L =50W, whereas an α-phase was obtained at P L >100W. At P L =150 and 200W (104)- and (012)-oriented α-Al2O3 films were obtained, respectively. The R dep of α-Al2O3 films increases with decreasing P L and P tot. Single-phase α-Al2O3 film was obtained at T dep =928K, which is about 350K lower than that obtained by conventional thermal CVD using Al(acac)3 precursor. [Copyright &y& Elsevier]