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Ab initio study of intrinsic, H, and He point defects in hcp-Er.

Authors :
Yang, L.
Peng, S. M.
Long, X. G.
Gao, F.
Heinisch, H. L.
Kurtz, R. J.
Zu, X. T.
Source :
Journal of Applied Physics. Mar2010, Vol. 107 Issue 5, p054903-054909. 7p. 2 Diagrams, 5 Charts, 4 Graphs.
Publication Year :
2010

Abstract

Ab initio calculations based on density functional theory have been performed to determine the properties of self-interstitial atoms (SIAs), vacancies, and single H and He atoms in hcp-Er. The results show that the most stable configuration for a SIA is a basal octahedral configuration, while the octahedral (O), basal split, and crowdion (C) interstitial configurations are less stable, followed by the split <0001> dumbbell and tetrahedral configurations. For both H and He defects, the formation energy of an interstitial atom is less than that of a substitutional atom in hcp-Er. Furthermore, the tetrahedral interstitial position is more stable than an octahedral position for both He and H interstitials. The hybridization of the He and H defects with Er atoms has been used to explain the relative stabilities of these defects in hcp-Er. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
107
Issue :
5
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
48590971
Full Text :
https://doi.org/10.1063/1.3309834