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Atomic structures of hydrogen-terminated Si(001) surfaces after wet cleaning by scanning tunneling microscopy.
- Source :
-
Applied Physics Letters . 9/28/1998, Vol. 73 Issue 13. 4 Black and White Photographs, 4 Diagrams, 1 Chart. - Publication Year :
- 1998
-
Abstract
- Scanning tunneling microscopy observations are performed on a H-terminated Si(001) surface treated with HF solutions and ultrapure water with very low dissolved oxygen and total organic carbon contents. Over a large area, row structures are observed in [110] and [11¯0] directions. Pyramidal-shaped etch pits are also observed, which are caused by anisotropic etching by OH ions. Detailed images clearly show 2×1 periodic structures. It is suggested that every other row of the ideally dihydride 1×1 surface is etched preferentially by OH ions. This explains the mechanism by which the smallest etch pits are formed. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SILICON
*SEMICONDUCTOR etching
*GEOMETRIC surfaces
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 73
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4873669
- Full Text :
- https://doi.org/10.1063/1.122304