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Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor.
- Source :
-
Applied Physics Letters . 6/29/1998, Vol. 72 Issue 26. 5 Graphs. - Publication Year :
- 1998
-
Abstract
- A simulator using a coupled Schro¨dinger equation, Poisson equation and Fermi–Dirac statistics to analyze inversion layer quantization is shown to match the measured capacitance versus voltage data of thin oxide gate metal-on-insulator capacitance closely. The effects of bias voltage, oxide thickness and doping concentration on the charge centroid are presented. A simple empirical model for the alternating current charge centroid of the inversion layer is proposed. This model predicts the in-version layer capacitance or charge centroid in terms of T[sub ox] (oxide thickness), V[sub t] (threshold voltage), and V[sub g] (gate voltage) explicitly. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 72
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4873720
- Full Text :
- https://doi.org/10.1063/1.121671