Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor.

A simulator using a coupled Schro¨dinger equation, Poisson equation and Fermi–Dirac statistics to analyze inversion layer quantization is shown to match the measured capacitance versus voltage data of thin oxide gate metal-on-insulator capacitance closely. The effects of bias voltage, oxide thickness and doping concentration on the charge centroid are presented. A simple empirical model for the alternating current charge centroid of the inversion layer is proposed. This model predicts the in-version layer capacitance or charge centroid in terms of T[sub ox] (oxide thickness), V[sub t] (threshold voltage), and V[sub g] (gate voltage) explicitly. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]