Cite
Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide.
MLA
Maeng, W. J., et al. “Flat Band Voltage (VFB) Modulation by Controlling Compositional Depth Profile in La2O3/HfO2 Nanolaminate Gate Oxide.” Journal of Applied Physics, vol. 107, no. 7, Apr. 2010, pp. 074109–14. EBSCOhost, https://doi.org/10.1063/1.3369388.
APA
Maeng, W. J., Kim, W.-H., & Kim, H. (2010). Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide. Journal of Applied Physics, 107(7), 074109–074114. https://doi.org/10.1063/1.3369388
Chicago
Maeng, W. J., Woo-Hee Kim, and Hyungjun Kim. 2010. “Flat Band Voltage (VFB) Modulation by Controlling Compositional Depth Profile in La2O3/HfO2 Nanolaminate Gate Oxide.” Journal of Applied Physics 107 (7): 074109–14. doi:10.1063/1.3369388.