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Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces.
- Source :
-
Applied Physics Letters . 5/3/2010, Vol. 96 Issue 18, p183504. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 2010
-
Abstract
- Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3–SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 96
- Issue :
- 18
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 50309167
- Full Text :
- https://doi.org/10.1063/1.3428433