Cite
Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu x O and HfO2/SiO2 high-κ stack gate dielectrics
MLA
Zou, Xiao, et al. “Fabrication and Electrical Properties of Metal-Oxide Semiconductor Capacitors Based on Polycrystalline p-Cu x O and HfO2/SiO2 High-κ Stack Gate Dielectrics.” Thin Solid Films, vol. 518, no. 15, May 2010, pp. 4446–49. EBSCOhost, https://doi.org/10.1016/j.tsf.2010.02.015.
APA
Zou, X., Fang, G., Yuan, L., Liu, N., Long, H., & Zhao, X. (2010). Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu x O and HfO2/SiO2 high-κ stack gate dielectrics. Thin Solid Films, 518(15), 4446–4449. https://doi.org/10.1016/j.tsf.2010.02.015
Chicago
Zou, Xiao, Guojia Fang, Longyan Yuan, Nishuang Liu, Hao Long, and Xingzhong Zhao. 2010. “Fabrication and Electrical Properties of Metal-Oxide Semiconductor Capacitors Based on Polycrystalline p-Cu x O and HfO2/SiO2 High-κ Stack Gate Dielectrics.” Thin Solid Films 518 (15): 4446–49. doi:10.1016/j.tsf.2010.02.015.