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Array of Two UV-Wavelength Detector Types.
- Source :
-
IEEE Transactions on Electron Devices . Jun2010, Vol. 57 Issue 6, p1224-1229. 6p. - Publication Year :
- 2010
-
Abstract
- An approach to fabricate a set of simultaneously operating dual-UV-wavelength detectors is described. The fabrication flow relies on the confined-epitaxy growth method. The confined epitaxial Alα Ga1--α N-layer stacking approach is used to establish simultaneous multiple UV-wavelength detection. The chosen stoichiometries of specific epitaxial layers set the wavelength sensitivity at approximately 355 nm for pixel A and 320 nm for pixel B. Spectral responsivity plots of the detectors clearly show the dual-UV-color sensitivity of the pair. The detectors have signal-to-noise ratios of 15 and 17 and spectral responsivity values of 0.12 A/W and 0.05 A/W for pixel A and pixel B, respectively. [ABSTRACT FROM AUTHOR]
- Subjects :
- *DETECTORS
*ULTRAVIOLET radiation
*WAVELENGTHS
*SEMICONDUCTORS
*EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 57
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 50994059
- Full Text :
- https://doi.org/10.1109/TED.2010.2045706