Electrical and mechanical characterisation of Si/Al ohmic contacts on diamond.

Authors :: Civrac, G.
Msolli, S.
Alexis, J.
Dalverny, O.
Schneider, H.
Source :: Electronics Letters (Institution of Engineering & Technology). 5/27/2010, Vol. 46 Issue 11, p791-793. 3p. 1 Black and White Photograph, 3 Graphs.
Publication Year :: 2010
Abstract: A new ohmic contact technology on diamond with low resistivity is presented. A Si/Al metallisation is used and leads to a 7×10-6 Ω.cm2 specific contact resistivity, measured by the transfer length method. Comparison is made between this technology and the Ti/Pt/Au traditional technology. Both technologies show very good electrical, thermal and mechanical characteristics. [ABSTRACT FROM AUTHOR]