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Theoretical Analysis and Experimental Characterization of the Dummy-Gated VDMOSFET.
- Source :
-
IEEE Transactions on Electron Devices . Sep2001, Vol. 48 Issue 9, p2168. 9p. 6 Black and White Photographs, 5 Diagrams, 2 Charts, 9 Graphs. - Publication Year :
- 2001
-
Abstract
- Presents a study which proposed a novel silicon radio frequency metal oxide semiconductor field-effect transistor structure with a dummy-gate incorporated between the active gates. Analysis of the structure of the transistor; Experimental details; Conclusions.
- Subjects :
- *METAL oxide semiconductor field-effect transistors
*RADIO frequency
*SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 5117782
- Full Text :
- https://doi.org/10.1109/16.944212