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Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique.
- Source :
-
IEEE Transactions on Electron Devices . Jul2010, Vol. 57 Issue 7, p1492-1496. 5p. - Publication Year :
- 2010
-
Abstract
- AlGaN/GaN high-electron mobility transistor's (HEMT's) off-state breakdown is investigated using drain-current injection techniques with different injection current levels. Competitions between the source leakage and gate leakage, pure leakage and impact ionization, and source- and gate-injection-induced impact ionization during the drain-injection measurement are discussed in detail. It was found that the breakdown originates from the source/gate leakage at low drain injection levels but is dominated by source/gate-induced impact ionization process at high drain injection currents. The source-induced impact ionization usually precedes the gate-induced impact ionization in low-gate leakage devices, resulting in a premature three-terminal off-state breakdown. We also found that the gate-bias value affects the breakdown voltage in the conventional three-terminal off-state breakdown I-V measurement and should be carefully considered. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 57
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 51907924
- Full Text :
- https://doi.org/10.1109/TED.2010.2048960