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Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2008 Part 1 of 2, Vol. 55 Issue 6, p3182-3188. 7p. 4 Diagrams, 1 Chart, 6 Graphs. - Publication Year :
- 2008
-
Abstract
- We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices. We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple-Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 55
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 52037567
- Full Text :
- https://doi.org/10.1109/TNS.2008.2007234