Some general experimental studies on charge-coupled device circuits.

The first part of the paper includes the derivation of a lump model for the basic CCD unit. This model consists of two capacitors, a current generator and a switch. Experimental results are given for the justification of this model.
In the second part of the paper a report is given on the successful operation of silicon gate CCD shift registers, two-phase and three-phase.
The last part presents photosensitivity results of CCD silicon gate shift registers operated as imaging arrays. The noise equivalent power (NEP) was 2 <x> 10<SUP-8> W/cm<SUP2> at a wavelength of 0.7 <mgr>m. Relative output as a function of integration time is also given. [ABSTRACT FROM AUTHOR]