The development of a gate assisted turn-off thyristor for use in high frequency applications.

The development of a high power, high frequency, inverter thyristor is described.
The techniques and procedures used to achieve forward blocking recovery times of less than 2 microseconds are summarized, and electrical test data are included to show that other thyristor parameters are not too adversely impaired.
This paper is concerned with the general problems involved in the design of high frequency thyristors, and briefly describes the techniques used to develop this particular device. [ABSTRACT FROM AUTHOR]