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Electrical characteristics and model for recessed channel fin field-effect transistor.
- Source :
-
Electronics Letters (Institution of Engineering & Technology) . 8/5/2010, Vol. 46 Issue 16, p1141-1143. 3p. 1 Black and White Photograph, 2 Diagrams, 1 Graph. - Publication Year :
- 2010
-
Abstract
- The recessed channel fin field-effect transistor (RC-FinFET) has been developed as a future DRAM cell transistor. A recess-channel structure is applied to the FinFET to form a RC-FinFET. A three series-connected transistor model is proposed to understand the electrical characteristics. The RC-FinFET is considered to be a serial connection of three transistors consisting of one bottom transistor and two vertical transistors. The electrical characteristics of the RC-FinFET are compared with the normal FinFET and recessed-channel-array transistor (RCAT). The short channel immunity of the RC-FinFET is better than the normal FinFET and RCAT. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 46
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 52721216
- Full Text :
- https://doi.org/10.1049/el.2010.0727