Back to Search
Start Over
Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors.
- Source :
-
Chinese Physics Letters . Aug2010, Vol. 27 Issue 8, p087302-087302. 1p. - Publication Year :
- 2010
-
Abstract
- A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 27
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 52879193
- Full Text :
- https://doi.org/10.1088/0256-307X/27/8/087302