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Ohmic and rectifier properties of Al/Ligand(N-APTH) and Al/Cu(II)Complex contacts

Authors :
Temirci, Cabir
Gülcan, Mehmet
Goksen, Kadir
Sönmez, Mehmet
Source :
Microelectronic Engineering. Nov2010, Vol. 87 Issue 11, p2282-2287. 6p.
Publication Year :
2010

Abstract

Abstract: We have produced a Ligand(N-APTH) and Cu(II)Complex of bidentate ligand containing a ring of the pyrimidine. Optical transmission measurements of the Ligand(N-APTH) and Cu(II)Complex thin films were performed by using a UV–Visible (UV–VIS) spectrophotometer. From the optical measurements, it was seen that the materials show semiconductor behaviors giving appropriate bandgaps with the values of 3.15eV and 2.36eV for Ligand(N-APTH) and Cu(II)Complex, respectively. With the pre-assumption that the material may exhibit a rectifier or ohmic behavior when it is brought into an appropriate contact with a metal, an attempt to explore the rectifying and ohmic properties of Al/Ligand(N-APTH)/Cu and Al/Cu(II)Complex/Cu contacts was made. As a result of current–voltage (I–V) measurements, it was discovered that the devices show excellent rectifier properties with a rectification ratio of about 10−3 for Al/Ligand(N-APTH)/Cu and 10−5 for Al/Cu(II)Complex/Cu rectifier contacts, respectively. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
01679317
Volume :
87
Issue :
11
Database :
Academic Search Index
Journal :
Microelectronic Engineering
Publication Type :
Academic Journal
Accession number :
52913011
Full Text :
https://doi.org/10.1016/j.mee.2010.03.004