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Ohmic and rectifier properties of Al/Ligand(N-APTH) and Al/Cu(II)Complex contacts
- Source :
-
Microelectronic Engineering . Nov2010, Vol. 87 Issue 11, p2282-2287. 6p. - Publication Year :
- 2010
-
Abstract
- Abstract: We have produced a Ligand(N-APTH) and Cu(II)Complex of bidentate ligand containing a ring of the pyrimidine. Optical transmission measurements of the Ligand(N-APTH) and Cu(II)Complex thin films were performed by using a UV–Visible (UV–VIS) spectrophotometer. From the optical measurements, it was seen that the materials show semiconductor behaviors giving appropriate bandgaps with the values of 3.15eV and 2.36eV for Ligand(N-APTH) and Cu(II)Complex, respectively. With the pre-assumption that the material may exhibit a rectifier or ohmic behavior when it is brought into an appropriate contact with a metal, an attempt to explore the rectifying and ohmic properties of Al/Ligand(N-APTH)/Cu and Al/Cu(II)Complex/Cu contacts was made. As a result of current–voltage (I–V) measurements, it was discovered that the devices show excellent rectifier properties with a rectification ratio of about 10−3 for Al/Ligand(N-APTH)/Cu and 10−5 for Al/Cu(II)Complex/Cu rectifier contacts, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 87
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 52913011
- Full Text :
- https://doi.org/10.1016/j.mee.2010.03.004