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Effects of Substrate Orientation and Channel Stress on Short-Channel Thin SOI MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Sep2010, Vol. 57 Issue 9, p2067-2072. 6p. 6 Graphs. - Publication Year :
- 2010
-
Abstract
- We present a study of the effects of substrate orientation and longitudinal channel stress on the performance of extremely thin silicon-on-insulator (ETSOI) MOSFETs with gate lengths down to 25 nm. We find that short-channel electron and hole mobilities follow the long-channel mobility trends versus substrate orientation and longitudinal channel stress. We show that with respect to (100) silicon-on-insulator (SOI) substrates, short-channel ETSOI MOSFETs on (110) SOI substrates lead to 25% enhancement of the p-channel FET drive current at the expense of 12% degradation of the n-channel FET drive current at a fixed off-current of 100 \nA/\mu\m and a supply voltage of 1 V. Finally, we estimate that an ETSOI complementary metal–oxide–semiconductor (CMOS) on (110) SOI substrates should lead to 10% faster ring oscillators compared with those on (100) SOI wafers, which also implies that (100)-oriented wafers with (110) sidewalls are a better choice for fabricating nonplanar FinFETs and trigate CMOS circuits. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 57
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 53047398
- Full Text :
- https://doi.org/10.1109/TED.2010.2052410