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Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs.
- Source :
-
IEEE Transactions on Nuclear Science . Aug2010 Part 1, Vol. 57 Issue 4, p1924-1932. 9p. 4 Diagrams, 2 Charts, 8 Graphs. - Publication Year :
- 2010
-
Abstract
- We studied the short- and long-term effects of heavy-ion strikes on silicon-on-insulator (SOI) FinFET devices manufactured in a sub 32-nm CMOS process. The degradation of the device DC characteristics after irradiation strongly depends on the incidence angle, strain, and channel type, depending on the balance between damage to the high-k gate oxide and to the buried oxide. The time-dependent dielectric breakdown (TDDB) and the device parameter degradation kinetics are affected by the LET, ion fluence, and incidence angle. A reduction in TDDB is observed in irradiated FinFETs with respect to unirradiated ones. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 57
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 53047506
- Full Text :
- https://doi.org/10.1109/TNS.2010.2040196