Preparation, dielectric and ferroelectric properties of Pb5Ge3O11 and Pb5Ge2.85Si0.15O11 thin films fabricated by sol–gel process

Abstract: Lead germanate–silicate (Pb5Ge2.85Si0.15O11) ferroelectric thin films were successfully fabricated on Pt/Ti/SiO2/(100)Si substrates by the sol–gel process. The thin films were fabricated by multi-coating at preheating temperatures of 350 and 450°C. After annealing the thin films at 600°C, the films exhibited c-axis preferred orientation. The degree of c-axis preferred orientation of the thin films preheated at 350°C was higher than that of films preheated at 450°C. Grain growth was influenced by the annealing time. The thin films exhibited a well-saturated ferroelectric P–E hysteresis loop when preheated at 350°C and annealed at 600°C for 1.5h. The values of the remanent polarization (Pr) and the coercive field (Ec) were approximately 2.1μC/cm2 and 100kV/cm, respectively. [ABSTRACT FROM AUTHOR]