Back to Search
Start Over
Temperature-dependent photoconductivity in β-In2S3 single crystals.
- Source :
-
Journal of Applied Physics . Sep2010, Vol. 108 Issue 4, p043518-35184. 4p. 1 Black and White Photograph, 4 Graphs. - Publication Year :
- 2010
-
Abstract
- The solar-energy absorption material β-In2S3 was characterized using temperature-dependent photoconductivity (PC) measurements in the temperature range between 30 and 340 K in this study, and thermoreflectance (TR) and photoluminescence (PL) measurements were carried out to identify near-band-edge transitions in the β-In2S3 tetragonal crystal. The experimental analyses of PL, PC, and TR confirmed that β-In2S3 is a direct semiconductor with a band gap of 2.073 eV at 30 K and 1.935 eV at 300 K. The PL and PC spectra manifest some defect-related features in the β-In2S3 single crystal. Two defect emissions and two band-edge luminescences were simultaneously detected in the PL spectrum at 30 K, and the temperature-dependent PC spectra of β-In2S3 from 160 to 300 K reveal an additional defectlike or band-to-band feature with an energy located above the conduction band edge (EC). The temperature dependences of the PC transition features in the β-In2S3 defect crystal were analyzed. The origin and mechanism of all defect states and band-edge transitions in the β-In2S3 single crystal are evaluated and discussed. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PHOTOCONDUCTIVITY
*PHOTOLUMINESCENCE
*SEMICONDUCTORS
*SPECTRUM analysis
*CRYSTALS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 108
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 53421904
- Full Text :
- https://doi.org/10.1063/1.3478719