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Transient model for gate turn-off thyristor in power electronic simulations.

Authors :
Liang, Y.C.
Gosbell, V.J.
Source :
International Journal of Electronics. Jan1991, Vol. 70 Issue 1, p85. 15p. 10 Diagrams, 1 Chart, 11 Graphs.
Publication Year :
1991

Abstract

Describes a two-level circuit model for a gate turn-off thyristor in power electronic simulations. Basis of the semiconducting phenomena; Incorporation of additional charge control, anode-cathode and gate-cathode resistance modulation networks to simulate turn-off phenomena; Methods for determining the model parameters.

Subjects

Subjects :
*ELECTRONIC circuits
*THYRISTORS
*POWER electronics

Details

Language :
English
ISSN :
00207217
Volume :
70
Issue :
1
Database :
Academic Search Index
Journal :
International Journal of Electronics
Publication Type :
Academic Journal
Accession number :
5367516
Full Text :
https://doi.org/10.1080/00207219108921259
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