Cite
0.7-dB Insertion-Loss D-Band Lange Coupler Design and Characterization in 0.13 μm SiGe BiCMOS Technology.
MLA
Lei Wang, et al. “0.7-DB Insertion-Loss D-Band Lange Coupler Design and Characterization in 0.13 Μm SiGe BiCMOS Technology.” Journal of Infrared, Millimeter & Terahertz Waves, vol. 31, no. 10, Oct. 2010, pp. 1136–45. EBSCOhost, https://doi.org/10.1007/s10762-010-9696-y.
APA
Lei Wang, Yong-Zhong Xiong, Bo Zhang, San-Ming Hu, Teck-Guan Lim, & Xiao-Jun Yuan. (2010). 0.7-dB Insertion-Loss D-Band Lange Coupler Design and Characterization in 0.13 μm SiGe BiCMOS Technology. Journal of Infrared, Millimeter & Terahertz Waves, 31(10), 1136–1145. https://doi.org/10.1007/s10762-010-9696-y
Chicago
Lei Wang, Yong-Zhong Xiong, Bo Zhang, San-Ming Hu, Teck-Guan Lim, and Xiao-Jun Yuan. 2010. “0.7-DB Insertion-Loss D-Band Lange Coupler Design and Characterization in 0.13 Μm SiGe BiCMOS Technology.” Journal of Infrared, Millimeter & Terahertz Waves 31 (10): 1136–45. doi:10.1007/s10762-010-9696-y.