Back to Search
Start Over
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer.
- Source :
-
Applied Physics Letters . 9/13/2010, Vol. 97 Issue 11, p112905. 3p. 4 Graphs. - Publication Year :
- 2010
-
Abstract
- The electrical properties of plasma-enhanced atomic-layer-deposited (PE-ALD) TiO2 as gate dielectric were investigated for germanium-channel complementary metal-oxide-semiconductor capacitors by using ultrathin in situ HfO2/GeO2 interlayers. TiO2 grown by PE-ALD exhibited a k value of 50±5. An equivalent oxide thickness of 0.9 nm was obtained for the TiO2(3 nm)/HfO2(1.2 nm)/GeO2(0.7 nm)/Ge capacitor with very low leakage current density of 2×10-7 A/cm2 at VFB±1 V. Capacitance-voltage hysteresis was below 30 mV for the TiO2/HfO2/GeO2/Ge capacitors. Relatively low minimum density of interface states, Dit ∼5×1011 eV-1 cm-2 was obtained, suggesting the potential of HfO2/GeO2 passivation layer for the application of TiO2 as gate dielectric for both p- and n-type Ge channels. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 97
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 53768666
- Full Text :
- https://doi.org/10.1063/1.3490710