Electrode effect on resistive switching of Ti-added amorphous SiO x films

Abstract: Ti-added amorphous SiO x films were sputter-deposited into stacks of Pt/SiO x /Pt and Cu/SiO x /Pt. Optimally prepared Pt/SiO x /Pt exhibits unipolar resistive switching over 102 cycles, resistance ratio ∼103, yet wide voltage distribution (2∼7V for SET, 0.5∼1.5V for RESET). Cu/SiO x /Pt exhibit similar endurance, resistance ratio up to 107, and SET and RESET voltages reduced to 1.8∼4.2V and 0.5∼1V, respectively. Cu diffusion into SiO x at the virgin state may play a role in resistive switching of Cu/SiO x /Pt stack besides of filament conduction. Ti-added amorphous SiO x films incorporating Cu electrode shows potential for resistive memory. [Copyright &y& Elsevier]