Características I-V-T de Diodos a Base de Silicio Poroso con Propiedades Fotovoltaicas.

This paper presents the current -- voltage characterization in a temperature range between 197K and 298K of electronic devices fabricated with porous silicon. Ag-Au-PS-Si(p) heterojunctions present photovoltaic properties and have a rectifying behavior. I-V-T measurements under obscurity regime allow us to determine the barrier heights and the ideality factors of the devices. The devices with an interfacial layer of PS have the behavior known as the T0 effect for a Schottky junction which may be associated to the inhomogeneity of the barrier height or to the fact that the current is dominated by the mechanism of thermionic-field emission TFE). [ABSTRACT FROM AUTHOR]