Cite
Study of SiO2 encapsulation for aluminum and phosphorus implant activation in 4H-SiC
MLA
Zhao, Feng, et al. “Study of SiO2 Encapsulation for Aluminum and Phosphorus Implant Activation in 4H-SiC.” Materials Letters, vol. 64, no. 23, Dec. 2010, pp. 2593–96. EBSCOhost, https://doi.org/10.1016/j.matlet.2010.08.048.
APA
Zhao, F., Islam, M. M., & Huang, C.-F. (2010). Study of SiO2 encapsulation for aluminum and phosphorus implant activation in 4H-SiC. Materials Letters, 64(23), 2593–2596. https://doi.org/10.1016/j.matlet.2010.08.048
Chicago
Zhao, Feng, Mohammad M. Islam, and Chih-Fang Huang. 2010. “Study of SiO2 Encapsulation for Aluminum and Phosphorus Implant Activation in 4H-SiC.” Materials Letters 64 (23): 2593–96. doi:10.1016/j.matlet.2010.08.048.