Unipolar resistive switching characteristics in Co3O4 films

Abstract: Unipolar resistive switching behavior has been investigated in Pt/Co3O4/Pt stacks. The resistance ratio of the high- and low- resistance states is over 5×103. The “ON/OFF” operation of the memory cells can be repeated more than 200 times at room temperature. The resistance of the two states can be kept for more than 16h without showing degradation. The temperature dependence of the resistance shows a metallic behavior at the low-resistance state, but a semiconductor-behavior at the high-resistance state. The mechanism responsible for the observed unipolar resistive switching behavior has been discussed. [ABSTRACT FROM AUTHOR]