Optical properties of BeCdSe/ZnCdMgSe strained quantum well structures.

We report the optical properties of BeCdSe/ZnCdMgSe single quantum well (QW) structures that consist of closely lattice matched ZnCdMgSe barrier layers and a strained BeCdSe QW layer (Δa/a=1.95%) grown on InP substrates. Emission from the red to the green regions of the visible spectrum was obtained from the structures with the QW thickness varying from 95 to 12 Å. Efficient QW emission, dominated by an exciton recombination behavior, was observed. From the Arrhenius plot of the integrated emission intensity as a function of temperature, an activation energy of 61 meV was obtained for a BeCdSe QW structure with a 48 Å thick QW layer. Parameters that describe the temperature dependence of the near band edge emission energy and the broadening of the excitonic emission were evaluated. Our results indicate that the BeCdSe-based QW structures are attractive for application as red light emitters. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]