SQUID, XRD and Raman Scattering Studies of Mn+ Implanted Gallium Arsenide.

In the present work, 325 keV Mn+ ions were implanted into semi-insulating GaAs substrate with various fluences varying from 1×1015 to 1×1016 ions cm-2. Post annealing was carried out using 5 MeV Si+ ions irradiation at substrate temperature of 350 °C to remove the Mn+ implantation damage. The properties of as implanted and post annealed samples were measured using superconducting quantum interference device (SQUID), X-ray diffraction and Raman scattering to characterize the structural changes. Zero-field-cooled (ZFC) and field-cooled (FC) magnetization as function of temperature were recorded for sample irradiated with 5 MeV silicon ions. X-ray diffraction study revealed the presence of magnetic phase of (GaMn)As. The sharpness of LO mode peak, after irradiation with silicon ions indicated the crystilinity of the sample. The Mn-like mode and (MnAs) like mode were also observed. [ABSTRACT FROM AUTHOR]