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Comments on “1.88-\m\Omega \cdot \cm^2 1650-V Normally on 4H-SiC TI-VJFET”.
- Source :
-
IEEE Transactions on Electron Devices . 12/01/2010, Vol. 57 Issue 12, p3540-3543. 4p. - Publication Year :
- 2010
-
Abstract
- The discussion section of paper “1.88-\m\Omega \cdot \cm^2 1650-V Normally on 4H-SiC TI-VJFET” which appeared in IEEE Transactions on Electron Devices, vol. 55, no. 8, August 2008, offers a comparative analysis between TI-VJFETs fabricated at USCI/Rutgers and VJFETs (SITs) fabricated at Northrop Grumman Electronic Systems (NGES) for power switching applications. I have a number of issues with this analysis which I wish to highlight. In addition, this paper claims VJFET performance records, which are dubious as they are based on on-resistance values obtained under bipolar operation and on blocking-voltages quoted at unspecified drain-current densities. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 57
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 55353767
- Full Text :
- https://doi.org/10.1109/TED.2010.2079172