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Atomic layer deposition goes main-stream in 22nm logic technologies.

Authors :
Verghese, M.
Maes, J. W.
Kobayashi, N.
Source :
Solid State Technology. Nov2010, Vol. 53 Issue 10, p18-21. 4p.
Publication Year :
2010

Abstract

The article discusses the use of atomic layer deposition (ALD) in 22nn logic process flow in the U.S. It states that each of the application space will create a need for configuration of manufacturing equipment and variations in technology. It notes that ALD chambers are ideal when an application demands thin films with exact thickness and uniformity. It also mentions that ALD have high precursor utilization efficiencies.

Details

Language :
English
ISSN :
0038111X
Volume :
53
Issue :
10
Database :
Academic Search Index
Journal :
Solid State Technology
Publication Type :
Academic Journal
Accession number :
55467243