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Reproducible resistance switching of a relatively thin FeO x layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure
- Source :
-
Thin Solid Films . Dec2010, Vol. 519 Issue 5, p1536-1539. 4p. - Publication Year :
- 2010
-
Abstract
- Abstract: In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeO x layer in the TiN/SiO2/FeO x /FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeO x transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO2/FeO x /FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 519
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 55632189
- Full Text :
- https://doi.org/10.1016/j.tsf.2010.08.165