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Raman scattering studies of p-type Sb-doped ZnO thin films.
- Source :
-
Journal of Applied Physics . Dec2010, Vol. 108 Issue 11, p113501. 4p. 1 Chart, 3 Graphs. - Publication Year :
- 2010
-
Abstract
- Antimony doped p-type ZnO films were grown on Al2O3 (0001) substrate by pulsed laser deposition. The structural properties of Zn1-xSbxO (3% and 5%) thin films were investigated by Raman scattering studies. The softening of local lattice due to the formation of (SbZn-2VZn) acceptor complexes was detected as the shift in E2high mode toward lower frequency side in ZnSbO thin films. Additional optical modes observed at 277, 333, 483, and 534 cm-1 are due to the breaking of translational symmetry in w-ZnO by Sb doping. The Zn-Sb related local vibrational mode was detected around 237 cm-1 in 5% Sb doped ZnO thin film. Room temperature Hall measurements exhibited low resistivity of 0.017 Ω cm, high hole concentration of 6.25×1018 cm-3, and mobility of 57.44 cm2/V s in the 5% Sb-doped ZnO thin film. [ABSTRACT FROM AUTHOR]
- Subjects :
- *RAMAN effect
*ZINC oxide thin films
*ZINC oxide
*THIN films
*ANTIMONY
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 108
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 55830744
- Full Text :
- https://doi.org/10.1063/1.3516493