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Comparison of the effects of electron and proton irridiation on n+-p-p+ silicon diodes.

Authors :
Taylor, S.J.
Kim, S.I.
Yamaguchi, M.
Yamaguchi, T.
Watanabe, S.
Ando, K.
Matsuda, S.
Hisamatsu, T.
Source :
Journal of Applied Physics. 5/1/1998, Vol. 83 Issue 9, p4620. 8p. 1 Diagram, 15 Graphs.
Publication Year :
1998

Abstract

Presents a study to compare effects of electron and proton irradiation on n+-p-p+ silicon diodes. Methodology used to conduct study; Indication of findings; Discussion on results.

Subjects

Subjects :
*SILICON diodes
*RADIATION

Details

Language :
English
ISSN :
00218979
Volume :
83
Issue :
9
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
562180
Full Text :
https://doi.org/10.1063/1.367246