Focused electron beam induced etching of silicon by chlorine gas: Negative effects of residual gas contamination on the etching process.

For the first time focused electron beam induced etching of silicon using molecular chlorine has been developed as reliable and reproducible process. Around the etched pits the etching process was found to be accompanied by carbonaceous deposition from hydrocarbon contamination of the residual gas typically present in a scanning electron microscope (SEM). This work will focus on the effect of residual gas deposition on this silicon etch process using chlorine. The process mechanisms for residual gas deposition (in the absence of chlorine) as well as the silicon etch process in the presence of chlorine are discussed in terms of precursor replenishment of the sample surface and precursor delivery to the processed area. The formation of carbonaceous deposits from undesired contaminants can block the surface from an etch process. Especially for low beam currents this problem was encountered. Results suggest that the presence of chlorine when processed with a high electron beam current dominates over residual gas deposition. On the other hand, the etch-inhibiting effect of an increased level of SEM chamber contamination (resulting in increased residual gas deposition rates) is shown. [ABSTRACT FROM AUTHOR]