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Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs.
- Source :
-
IEEE Transactions on Nuclear Science . 12/1/2010 Part 1, Vol. 57 Issue 6, p3066-3070. 5p. - Publication Year :
- 2010
-
Abstract
- The irradiation and annealing responses of Ge pMOSFETs are investigated as a function of device processing. Transmission gate bias is found to be the worst-case irradiation bias condition. Junction leakage increases with total dose, which leads to a decrease in the I on /I off ratio. The I on /I off ratio recovers with room temperature annealing. Both band-to-band tunneling and trap-assisted tunneling contribute to the observed leakage. Device leakage before and after irradiation is found to be sensitive to halo implant dose and the number of Si monolayers at the Ge/insulator interface. Interface trap densities and body leakage also increase with dose and decrease with annealing. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 57
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 57254279
- Full Text :
- https://doi.org/10.1109/TNS.2010.2080286