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Scatter Defects and Hall Scattering Factor For The Mobility of Boron In Silicon.
- Source :
-
AIP Conference Proceedings . 1/7/2011, Vol. 1321 Issue 1, p181-183. 3p. - Publication Year :
- 2011
-
Abstract
- The mobility-carrier concentration relation for concentrations greater than 1E20 cm-3 B is shown to depend upon the concentration of scattering defects generated near the surface as a function of the doping and annealing process. This contradicts the Masetti model which assigns a fixed relation for each dopant species, without regard for the doping or annealing process used. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1321
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 57288926
- Full Text :
- https://doi.org/10.1063/1.3548342