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Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE
- Source :
-
Journal of Crystal Growth . Jan2011, Vol. 314 Issue 1, p5-8. 4p. - Publication Year :
- 2011
-
Abstract
- Abstract: Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (11−20) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (11−20) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434–3.442eV. The film grown at 800°C shows emission at 2.2eV, which is attributed to yellow luminescence along with near band edge emission. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 314
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 57302249
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2010.10.032