Cite
A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility.
MLA
Platania, Elisa, et al. “A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility.” IEEE Transactions on Industry Applications, vol. 47, no. 1, Jan. 2011, pp. 199–211. EBSCOhost, https://doi.org/10.1109/TIA.2010.2090843.
APA
Platania, E., Chen, Z., Chimento, F., Grekov, A. E., Fu, R., Lu, L., Raciti, A., Hudgins, J. L., Mantooth, H. A., Sheridan, D. C., Casady, J., & Santi, E. (2011). A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility. IEEE Transactions on Industry Applications, 47(1), 199–211. https://doi.org/10.1109/TIA.2010.2090843
Chicago
Platania, Elisa, Zhiyang Chen, Filippo Chimento, Alexander E. Grekov, Ruiyun Fu, Liqing Lu, Angelo Raciti, et al. 2011. “A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility.” IEEE Transactions on Industry Applications 47 (1): 199–211. doi:10.1109/TIA.2010.2090843.