Cite
Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs.
MLA
Wang, Maojun, and Kevin J. Chen. “Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices, vol. 58, no. 2, Feb. 2011, pp. 460–65. EBSCOhost, https://doi.org/10.1109/TED.2010.2091958.
APA
Wang, M., & Chen, K. J. (2011). Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 58(2), 460–465. https://doi.org/10.1109/TED.2010.2091958
Chicago
Wang, Maojun, and Kevin J. Chen. 2011. “Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices 58 (2): 460–65. doi:10.1109/TED.2010.2091958.