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A V-Band Divide-by-4 Direct Injection-Locked Frequency Divider in 0.18-\mu\ m CMOS.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . 02/01/2011, Vol. 59 Issue 2, p393-405. 13p. - Publication Year :
- 2011
-
Abstract
- In this paper, a novel circuit topology of aCMOS divide-by-4 direct injection-locked frequency divider is presented for millimeter-wave applications. To enhance the locking range for circuit operations with a division ratio of 4, a series peaking technique is introduced in the proposed divider structure such that improved input injection efficiency can be achieved. Using a standard 0.18-\mu\ m CMOS process, a V-band frequency divider is fabricated for demonstration. Operated at a supply voltage of 1.8 V, the divider core consumes a dc power of 12.6 mW. At an incident power of 0 dBm, the fabricated circuit exhibits an input locking range of 2.44 GHz in the vicinity of 60 GHz. The measured output power and locked phase noise at 1-MHz offset are -\7 dBm and -\133 dBc/Hz, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 59
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 58126207
- Full Text :
- https://doi.org/10.1109/TMTT.2010.2097710