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Two-Dimensional Analysis of Field-Plate Effects on Surface-State-Related Current Transients and Power Slump in GaAs FETs.
- Source :
-
IEEE Transactions on Electron Devices . 03/01/2011, Vol. 58 Issue 3, p698-703. 6p. - Publication Year :
- 2011
-
Abstract
- In this paper, we carry out a 2-D transient analysis of field-plate GaAs metal–semiconductor field-effect transistors (FETs) by taking surface states into account. Quasi-pulsed current–voltage curves are derived from the transient characteristics. We show that drain lag and current slump (power slump) due to surface states are reduced by introducing a field plate because the fixed potential at the field plate mitigates the trapping effects of the surface states. The dependence of lag and current slump on the field-plate length and the \SiO2 passivation layer thickness is also studied. We show that it is possible to reduce the current slump and maintain the high-frequency performance of GaAs FETs at optimum values of the field-plate length and the \SiO2 layer thickness. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 58
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 58578296
- Full Text :
- https://doi.org/10.1109/TED.2010.2094621