Cite
Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach.
MLA
Fan, Ming-Long, et al. “Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach.” IEEE Transactions on Electron Devices, vol. 58, no. 3, Mar. 2011, pp. 609–16. EBSCOhost, https://doi.org/10.1109/TED.2010.2096225.
APA
Fan, M.-L., Wu, Y.-S., Hu, V. P.-H., Hsieh, C.-Y., Su, P., & Chuang, C.-T. (2011). Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach. IEEE Transactions on Electron Devices, 58(3), 609–616. https://doi.org/10.1109/TED.2010.2096225
Chicago
Fan, Ming-Long, Yu-Sheng Wu, Vita Pi-Ho Hu, Chien-Yu Hsieh, Pin Su, and Ching-Te Chuang. 2011. “Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach.” IEEE Transactions on Electron Devices 58 (3): 609–16. doi:10.1109/TED.2010.2096225.