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Memristive operations demonstrated by gap-type atomic switches.
- Source :
-
Applied Physics A: Materials Science & Processing . Mar2011, Vol. 102 Issue 4, p811-815. 5p. 5 Graphs. - Publication Year :
- 2011
-
Abstract
- We demonstrate memristive operations using gap-type AgS atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type AgS atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 102
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 59259385
- Full Text :
- https://doi.org/10.1007/s00339-011-6317-0