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Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors.
- Source :
-
Applied Physics Letters . 3/7/2011, Vol. 98 Issue 10, p103509. 3p. 4 Graphs. - Publication Year :
- 2011
-
Abstract
- Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift (>7.1 V) in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm O2 ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from VO to VO2+ was responsible for the NBIS-induced instability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 98
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 59262257
- Full Text :
- https://doi.org/10.1063/1.3564882