Growth and annealing characterization of ZnGeP2 crystal

Abstract: Mid-infrared ZnGeP2 single crystal was successfully grown by the vertical Bridgman technique under the condition of spontaneous nucleation. By the X-ray Fluorescence analysis method, the constitution of Zn, Ge and P in as-grown ZnGeP2 single crystal was measured. Its defects were studied with an optical microscope. The laser damage threshold of ZnGeP2 crystals was measured to be 55.67MW/cm2 at the wavelength of 1064nm. The transmission spectra of ZnGeP2 were measured at room temperature. By annealing treatment in vacuum, ZnGeP2 powder and a pressure, its optical absorption in the region 0.7–2.5μm was found to decrease. [Copyright &y& Elsevier]