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A 77-GHz PA with ground-plane parasitic cancellation in a SiGe HBT BiCMOS technology.
- Source :
-
Microwave & Optical Technology Letters . Jun2011, Vol. 53 Issue 6, p1413-1416. 4p. 3 Diagrams, 1 Chart, 2 Graphs. - Publication Year :
- 2011
-
Abstract
- This letter presents a 77-GHz power amplifier implemented in a SiGe BiCMOS technology featuring bipolar transistors with 160/175-GHz f/ f. The circuit adopts a two stage differential topology with integrated input/output matching networks. The amplifier performance is considerably improved thanks to proper input/output LC resonant networks, which cancel out the ground-plane parasitic effect. Matching networks use stacked transformers for impedance matching, differential-to-single-ended conversion, and electro-static discharge protection. The circuit achieves a power gain of 18.5 dB, a maximum output power of 11.6 dBm, with 4.2% power-added efficiency, and an output 1-dB compression point of 9.3 dBm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1413-1416, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25972 [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08952477
- Volume :
- 53
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Microwave & Optical Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 59592117
- Full Text :
- https://doi.org/10.1002/mop.25972