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Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE
- Source :
-
Materials Letters . May2011, Vol. 65 Issue 9, p1396-1399. 4p. - Publication Year :
- 2011
-
Abstract
- Abstract: Indium nitride (InN) epilayers have been successfully grown by nitrogen-plasma-assisted molecular beam epitaxy (NPA-MBE) on Si (111) substrates using different buffer layers. Growth of a (0001)-oriented single crystalline wurtzite–InN layer was confirmed by high resolution X-ray diffraction (HRXRD). The Raman studies show the high crystalline quality and the wurtzite lattice structure of InN films on the Si substrate using different buffer layers and the InN/β–Si3N4 double buffer layer achieves minimum FWHM of E 2 (high) mode. The energy gap of InN films was determined by optical absorption measurement and found to be in the range of ~0.73–0.78eV with a direct band nature. It is found that a double-buffer technique (InN/β–Si3N4) insures improved crystallinity, smooth surface and good optical properties. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 0167577X
- Volume :
- 65
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Materials Letters
- Publication Type :
- Academic Journal
- Accession number :
- 59639867
- Full Text :
- https://doi.org/10.1016/j.matlet.2011.02.012