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Folded Gate LDMOS Transistor With Low-On-Resistance and High Transconductance.
- Source :
-
IEEE Transactions on Electron Devices . Dec2001, Vol. 48 Issue 12, p2917. 12p. 6 Diagrams, 4 Charts, 14 Graphs. - Publication Year :
- 2001
-
Abstract
- Presents a study that proposed a novel folded gate LD metal oxide semiconductor transistor (FG-LDMOST) with the properties of low-on resistance and high transconductance. Information on how the FG structure was formed; Investigation of the FG concept; Fabrication of FG-LDNOS on 4-5 &Ω; cm n-type <100> lightly doped substrate using complementary metal oxide semiconductor (CMOS) compatible process technology.
- Subjects :
- *GATE array circuits
*METAL oxide semiconductor field-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 6001422
- Full Text :
- https://doi.org/10.1109/16.974729